DS42553 datasheet(19/58 Pages) AMD

부품명	DS42553

상세설명	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

Download	58 Pages

Scroll/Zoom	100%

제조업체	AMD [Advanced Micro Devices]

홈페이지	http://www.amd.com

Logo

19 / 58 page

DS42553

19

SecSi (Secured Silicon) Sector Flash

Memory Region

The SecSi (Secured Silicon) Sector feature provides a

Flash memory region that enables permanent part

identification through an Electronic Serial Number

(ESN). The SecSi Sector is 64 Kbytes in length, and

uses a SecSi Sector Indicator Bit to indicate whether

or not the SecSi Sector is locked when shipped from

the factory. This bit is permanently set at the factory

and cannot be changed, which prevents cloning of a

factory locked part. This ensures the security of the

ESN once the product is shipped to the field.

AMD offers the device with the SecSi Sector either

fac tor y lock ed or customer lock able. T he fac -

tory-locked version is always protected when shipped

from the factory, and has the SecSi Sector Indicator

Bit permanently set to a “1.” The customer-lockable

version is shipped with the unprotected, allowing cus-

tomers to utilize the that sector in any manner they

choose. The customer-lockable version has the SecSi

Sector Indicator Bit permanently set to a “0.” Thus, the

SecSi Sector Indicator Bit prevents customer-lockable

devices from being used to replace devices that are

factory locked.

The system accesses the SecSi Sector through a

command sequence (see “Enter SecSi Sector/Exit

SecSi Sector Command Sequence”). After the system

has written the Enter SecSi Sector command se-

quence, it may read the SecSi Sector by using the

addresses normally occupied by the boot sectors. This

mode of operation continues until the system issues

the Exit SecSi Sector command sequence, or until

power is removed from the device. On power-up, or

following a hardware reset, the device reverts to send-

ing commands to the boot sectors.

Factory Locked: SecSi Sector Programmed and

Protected At the Factory

In a factory locked device, the SecSi Sector is pro-

tected when the device is shipped from the factory.

The SecSi Sector cannot be modified in any way. The

device is available preprogrammed with a random, se-

cure ESN only

In devices that have an ESN, the Top Boot starting ad-

dress of the ESN will be at the bottom of the lowest 8

Kbyte boot sector at addresses 1F8000h–1F8007h in

word mode (or addresses 3F0000h–3F000Fh in byte

mode).

Customer Lockable: SecSi Sector NOT

Programmed or Protected At the Factory

If the security feature is not required, the SecSi Sector

can be treated as an additional Flash memory space,

expanding the size of the available Flash array by 64

Kbytes. The SecSi Sector can be read, programmed,

and erased as often as required. Note that the acceler-

ated programming (ACC) and unlock bypass functions

are not available when programming the SecSi Sector.

The SecSi Sector area can be protected using one of the

following procedures:

s Write the three-cycle Enter SecSi Sector Region

command sequence, and then follow the in-system

sector protect algorithm as shown in Figure 2, ex-

cept that RESET# may be at either V

IH or VID. This

allows in-system protection of the without raising

any device pin to a high voltage. Note that this

method is only applicable to the SecSi Sector.

s Write the three-cycle Enter SecSi Sector Region

command sequence, and then use the alternate

method of sector protection described in the “Sec-

tor/Sector Block Protection and Unprotection”.

Once the SecSi Sector is locked and verified, the sys-

t e m m u st w r it e t h e Ex it Se cSi Se ct or R e g i o n

command sequence to return to reading and writing

the remainder of the array.

The SecSi Sector protection must be used with cau-

tion since, once protected, there is no procedure

available for unprotecting the SecSi Sector area and

none of the bits in the SecSi Sector memory space

can be modified in any way.

Hardware Data Protection

The command sequence requirement of unlock cycles

for programming or erasing provides data protection

against inadvertent writes (refer to Table 12 for com-

mand definitions). In addition, the following hardware

data protection measures prevent accidental erasure

or programming, which might otherwise be caused by

spurious system level signals during V

CC power-up

and power-down transitions, or from system noise.

Low VCC Write Inhibit

When VCC is less than VLKO, the device does not ac-

cept any write cycles. This protects data during VCC

power-up and power-down. The command register

and all internal program/erase circuits are disabled,

and the device resets to reading array data. Subse-

quent writes are ignored until VCC is greater than VLKO.

The system must provide the proper signals to the

control pins to prevent unintentional writes when VCC

is greater than VLKO.

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE#f

or WE# do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# =

V

IL, CE#f = VIH or WE# = VIH. To initiate a write cycle,

유사한 부품 번호 - DS42553

제조업체	부품명	데이터시트	상세설명
Maxim Integrated Produc...	DS4250D++	158Kb / 8P	DS4-XO Series Crystal Oscillators Rev 2; 6/08
Maxim Integrated Produc...	DS4250P++	158Kb / 8P	DS4-XO Series Crystal Oscillators Rev 2; 6/08
Advanced Micro Devices	DS42514	832Kb / 57P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	DS42515	830Kb / 57P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	DS42516	953Kb / 58P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

More results

유사한 설명 - DS42553

제조업체	부품명	데이터시트	상세설명
SPANSION	AM41DL3208G	1Mb / 65P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
SPANSION	AM42DL6404G	1,020Kb / 61P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Advanced Micro Devices	DS42515	830Kb / 57P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	DS42585	958Kb / 58P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	DS42587	958Kb / 58P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	DS42514	832Kb / 57P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
	AM49DL640AG	1,005Kb / 65P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
SPANSION	AM42BDS640AG	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Advanced Micro Devices	AM41DL6408H	1Mb / 66P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Advanced Micro Devices	DS42516	953Kb / 58P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

More results

DS42553 데이터시트(PDF) 19 Page - Advanced Micro Devices

DS42553 데이터시트(HTML) 19 Page - Advanced Micro Devices

유사한 부품 번호 - DS42553

유사한 설명 - DS42553

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58

데이터시트 다운로드

링크 URL