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DS42587 데이터시트(HTML) 55 Page - Advanced Micro Devices

부품명 DS42587
상세내용  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
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DS42587 데이터시트(HTML) 55 Page - Advanced Micro Devices

 
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DS42587
55
Flash Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
12 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Note: 7.Test conditions T
A = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
49
sec
Byte Program Time
5
150
µs
Excludes system level
overhead (Note 5)
Word Program Time
7
210
µs
Accelerated Byte/Word Program Time
4
120
µs
Chip Program Time
(Note 3)
Byte Mode
21
63
sec
Word Mode
14
42
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter
Symbol
Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
11
14
pF
C
OUT
Output Capacitance
V
OUT = 0
12
16
pF
C
IN2
Control Pin Capacitance
V
IN = 0
14
16
pF
C
IN3
WP#/ACC Pin Capacitance
V
IN = 0
17
20
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years


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