K5L5628JTM datasheet(63/98 Pages) SAMSUNG

부품명	K5L5628JTM

상세설명	256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

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제조업체	SAMSUNG [Samsung semiconductor]

홈페이지	http://www.samsung.com/Products/Semiconductor

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63 / 98 page

Preliminary

K5L5628JT(B)M

Revision 1.0

November 2004

63

MCP MEMORY

Preliminary

A0-A23

Notes:

1. Address boundry occurs every 16 words beginning at address 00000FH , 00001FH , 00002FH , etc.

2. Address 000000H is also a boundry crossing.

3. No additional clock cycles are needed except for 1st boundary crossing.

Figure 16. Crossing of first word boundary in burst read mode.

Case 3 : Start from "4N+2" address group

CE

OE

RDY

CLK

Data Bus

AVD

tCEZ

tOEZ

tOER

F11

12

13

10

D

E

11

12

13

14

Additional 1 Cycle for First Word Boundary

5 cycle for initial access shown.(54MHz case)

E

D

F

10

Case2 : Start from "4N+1" address group

CE

OE

RDY

CLK

AVD

tCEZ

tOEZ

tOER

F

111213

10

E

F

11

12

13

14

Additional 2 Cycle for First Word Boundary

5 cycle for initial access shown.(54MHz case)

10

E

Data Bus

유사한 설명 - K5L5628JTM

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	K8S6415ETB	905Kb / 39P	64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
Samsung semiconductor	K5N1229ACD-BQ12	2Mb / 128P	512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash
SPANSION	MB84SF6H6H6L2-70	2Mb / 100P	3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
Samsung semiconductor	K8D6X16UTM	639Kb / 48P	64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
	K8D6X16UTM	1Mb / 48P	64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
	K8D1716UTB	482Kb / 40P	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
	K8D1716UTC	1Mb / 41P	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
Macronix International	MX29VS128F	1Mb / 5P	128M-BIT [8M x16-bit] CMOS 1.8 Volt
Integrated Silicon Solu...	IS45S81600E	870Kb / 61P	16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
Integrated Silicon Solu...	IS42S81600E	934Kb / 61P	16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

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