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RU6H9R 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd

부품명 RU6H9R
상세내용  N-Channel 650V (D-S) Power MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU6H9R 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 650V (D-S) Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25
Ω, IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD
≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) max. at 25 °C (
Ω)VGS = 10 V
0.
Qg max. (nC)
43
Qgs (nC)
5
Qgd (nC)
22
Configuration
Single
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
ID
12
A
TC = 100 °C
9.4
Pulsed Drain Current a
IDM
45
Linear Derating Factor
3.6
W/°C
Single Pulse Avalanche Energy b
EAS
mJ
Maximum Power Dissipation
PD
/34
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Drain-Source Voltage Slope
TJ = 125 °C
dV/dt
15
V/ns
Reverse Diode dV/dt d
4.1
Soldering Recommendations (Peak Temperature) c
for 10 s
300
°C
TO-220AB
Top View
GD S
G D S
TO-220 FULLPAK
Top View
58
D2PAK
(TO-263)
G
D
S
106
290
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU6H9R
1


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