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RU6H9R 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

부품명 RU6H9R
상세내용  N-Channel 650V (D-S) Power MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU6H9R 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  RU6H9R 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 7Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 8Page - VBsemi Electronics Co.,Ltd RU6H9R 데이터시트 HTML 9Page - VBsemi Electronics Co.,Ltd Next Button
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
0
5
10
15
20
25
30
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
T
J = 25 °C
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
T
J = 150 °C
5 V
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
BOTTOM
6 V
VGS, Gate-to-Source Voltage (V)
0
10
20
30
40
50
0
5
10
15
20
25
T
J = 25 °C
T
J = 150 °C
V
DS = 30.8 V
TJ, Junction Temperature (°C)
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
0
0.5
1
1.5
2
2.5
3
V
GS = 10 V
I
D = 8 A
VDS, Drain-to-Source Voltage (V)
1400
700
0
200
400
2800
0
2100
100
300
500
600
C
iss
C
oss
C
rss
V
GS = 0 V, f = 1 MHz
C
iss = Cgs + Cgd, Cds Shorted
C
rss = Cgd
C
oss = Cds + Cgd
Qg, Total Gate Charge (nC)
16
4
0
24
20
12
8
0
20
40
60
80
V
DS = 520 V
V
DS = 325 V
V
DS = 130 V
100
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU6H9R
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