RU6Z5R datasheet(1/9 Pages) VBSEMI

부품명	RU6Z5R

상세설명	N-Channel 650 V (D-S) MOSFET

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FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Compliant to RoHS directive 2002/95/EC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12).

c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. Drain current limited by maximum junction temperature.

PRODUCT SUMMARY

VDS (V)

650

RDS(on) (Ω)VGS = 10 V

1.7

Qg (Max.) (nC)

48

Qgs (nC)

12

Qgd (nC)

19

Configuration

Single

Available

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Currente

VGS at 10 V

TC = 25 °C

ID

A

Continuous Drain Current

TC = 100 °C

4.2

Pulsed Drain Currenta

IDM

18

Linear Derating Factor

0.48

W/°C

Single Pulse Avalanche Energyb

EAS

325

mJ

Repetitive Avalanche Currenta

IAR

4

A

Repetitive Avalanche Energya

EAR

6mJ

Maximum Power Dissipation

TC = 25 °C

PD

60

W

Peak Diode Recovery dV/dtc

dV/dt

2.8

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)d

for 10 s

300

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

S

N-Channel MOSFET

G

D

TO-220AB

Top View

GD S

4.5

N-Channel

650 V (D-S)MOSFET

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

RU6Z5R

1

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