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2SC2295 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Panasonic Semiconductor

๋ถ€ํ’ˆ๋ช… 2SC2295
์ƒ์„ธ๋‚ด์šฉ  Silicon NPN epitaxial planer type(For high-frequency amplification)
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2SC2295 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Panasonic Semiconductor

   
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1
Transistor
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1022
s Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency fT.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25หšC)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TOโ€“236
2:Emitter
EIAJ:SCโ€“59
3:Collector
Mini Type Package
2.8
+0.2
โ€“0.3
1.5
+0.25
โ€“0.05
0.65
ยฑ0.15
0.65
ยฑ0.15
3
1
2
0.4
ยฑ0.2
0.1 to 0.3
Symbol
VCBO
VCEO
CEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
200
150
โ€“55 ~ +150
Unit
V
V
V
mA
mW
หšC
หšC
s Electrical Characteristics (Ta=25หšC)
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
ICBO
hFE
*
fT
NF
Zrb
Cre
Conditions
VCB = 10V, IE = 0
VCB = 10V, IE = โ€“1mA
VCB = 10V, IE = โ€“1mA, f = 200MHz
VCB = 10V, IE = โ€“1mA, f = 5MHz
VCB = 10V, IE = โ€“1mA, f = 2MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
min
70
150
typ
250
2.8
22
0.9
max
0.1
220
4
50
1.5
Unit
ยตA
MHz
dB
โ„ฆ
pF
Marking symbol :
V
*h
FE Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220
Marking Symbol
VB
VC


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