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2SC3829 데이터시트(PDF) 1 Page - Panasonic Semiconductor

부품명 2SC3829
상세설명  Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
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제조업체  PANASONIC [Panasonic Semiconductor]
홈페이지  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SC3829 데이터시트(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC3829
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s Features
q
Low noise figure NF.
q
High gain.
q
High transition frequency fT.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO–236
2:Emitter
EIAJ:SC–59
3:Collector
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.4
±0.2
0.1 to 0.3
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
2
80
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
ICBO
IEBO
VCBO
VCEO
hFE
fT
Cob
| S21e |
2
GUM
NF
Conditions
VCB = 10V, IE = 0
VEB = 2V, IC = 0
IC = 10µA, IE = 0
IC = 100µA, IB = 0
VCE = 8V, IC = 20mA
VCE = 8V, IC = 20mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
VCE = 8V, IC = 20mA, f = 800MHz
min
15
10
50
5
10
typ
150
6
0.7
13.5
15
max
1
1
300
1.2
2
Unit
µA
µA
V
V
GHz
pF
dB
dB
dB
Marking symbol :
3M


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