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5N65L-TN3-R 데이터시트(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 5N65L-TN3-R
상세내용  N-Channel MOSFET uses advanced trench technology
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제조사  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

5N65L-TN3-R 데이터시트(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  5N65L-TN3-R 데이터시트 HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features:
1) VDS=650V,ID=5A,RDS(ON)<2.7Ω@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings:(TC=25unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±
30
V
ID
Continuous Drain Current-TC=25℃
5
A
Continuous Drain Current-TC=100℃
2.5
IDM
Pulsed Drain Current(Note 1)
25
A
EAS
Single Pulsed Avalanche Energy (Note 2)
80
mJ
IAR
Avalanche Current (Note 1)
5
A
EAR
Repetitive Avalanche Energy (Note 1)
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5
V/ns
PD
Power Dissipation,
TC=25℃
24.5
W
Power Dissipation-Derate above 25°C
0.2
W/℃
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
D
S
G
5N65L-TN3-R


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