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5N65L-TN3-R 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 5N65L-TN3-R
상세내용  N-Channel MOSFET uses advanced trench technology
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제조사  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

5N65L-TN3-R 데이터시트(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  5N65L-TN3-R 데이터시트 HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 5N65L-TN3-R 데이터시트 HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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2 ?
Symbol
Parameter
Max
Units
R?JC
Thermal Resistance,Junction to Case
5.1
?
/W
R?JA
Thermal Resistance, Junction-to-Ambient
45.3
Electrical Characteristics?(TC=25? unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
V(BR)DSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250?A
650
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=650V
---
---
1
?
A
VGS=0V, VDS=520V,TC = 125?
---
---
10
?
A
IGSS
Gate-Source Leakage Current
VGS=30V, VDS=0A
---
---
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250?A
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=2.5A
---
2.3
2.7
?
GFS
Forward Transconductance
VDS = 40 V, ID = 2 .5A(Note 4)
---
3.8
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
400
---
pF
Coss
Output Capacitance
---
55
---
Crss
Reverse Transfer Capacitance
---
1.3
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=325V,ID=5A, RG =25?
(Note 4,5)
---
7
---
ns
tr
Rise Time
---
22
---
ns
td(off)
Turn-Off Delay Time
---
15
---
ns
tf
Fall Time
---
23
---
ns
Qg
Total Gate Charge
VDS=520V, VGS=10V, ID=5A
---
13
---
nC
Thermal Characteristics?
5N65L-TN3-R


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