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FTK3N40S 데이터시트(PDF) 1 Page - First Silicon Co., Ltd

부품명 FTK3N40S
부품 상세설명  400V N-Channel MOSFETs
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제조업체  FS [First Silicon Co., Ltd]
홈페이지  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3N40S 데이터시트(HTML) 1 Page - First Silicon Co., Ltd

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General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min )= 400V, ID= 2A
Drain-Source ON Resistance : RDS(ON)=3.4Ω (max) @VGS =10V
Qg(typ.) =4.4nC
MAXIMUM RATING (Tc=25
)
* : Drain current limited by maximum junction temperature.
** : Surface Mounted on FR4 Board 2 Inch
2 Inch
1mm.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
30
V
Drain Current
@TC=25
ID
2*
A
@TC=100
1.2*
Pulsed (Note1)
IDP
6*
Single Pulsed Avalanche Energy
(Note 2)
EAS
52
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
0.2
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
V/ns
Drain Power
Dissipation
TA=25
PD
2**
W
Derate above25
0.02
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
10.0
/W
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5**
/W
1. Gate
2. Drain
3. Source
400V N-Channel MOSFETs
SEMICONDUCTOR
TECHNICAL DATA
FTK3N40S
2019. 09. 27
1/6
Revision No : 0
SYMBOL
D
G
S


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