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SIR424DP-T1-GE3 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd

부품명 SIR424DP-T1-GE3
상세내용  N-Channel 30 V (D-S) MOSFET
Download  7 Pages
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SIR424DP-T1-GE3 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  SIR424DP-T1-GE3 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 7Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
RDS(on) vs. VGS vs. Temperature
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
175
VGS = 10 V, ID = 32 A
TJ - Junction Temperature (°C)
VGS = 4.5 V, ID = 29.8 A
0.000
0.001
0.002
0.003
0.004
0246
8
10
VGS - Gate-to-Source Voltage (V)
ID = 32 A
TA = 125 °C
TA = 25 °C
Forward Diode Voltage vs. Temperature
Threshold Voltage
VSD - Source-to-Drain Voltage (V)
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
TJ = 25 °C
TJ = 150 °C
0.8
1.2
1.6
2.0
2.4
2.8
- 50
- 25
0
25
50
75
100
125
150
175
ID = 250 µA
TJ - Temperature (°C)
Safe Operating Area, Junction-to-Ambient
VDS - Drain-to-Source Voltage (V)
*VGS
minimum VGS at which rDS(on) is specified
1000
10
0.1
1
10
100
0.1
100
1
10 ms
TA = 25 °C
Single Pulse
100 ms
1 s
100 µs
1 ms
DC
Limited by rDS(on)*
0.01
0.001
10 s
BVDSS Limited
SIR424DP-T1-GE3
4
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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