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SIR424DP-T1-GE3 데이터시트(HTML) 5 Page - VBsemi Electronics Co.,Ltd

부품명 SIR424DP-T1-GE3
상세내용  N-Channel 30 V (D-S) MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SIR424DP-T1-GE3 데이터시트(HTML) 5 Page - VBsemi Electronics Co.,Ltd

  SIR424DP-T1-GE3 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 7Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Package Limited
Power Derating
C - Case Temperature (°C)
T
0
50
100
150
200
250
300
0
25
50
75
100
125
150
175
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10- 4
10- 3
10- 2
10- 1
1
10
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
SIR424DP-T1-GE3
5
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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