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SIR424DP-T1-GE3 데이터시트(HTML) 2 Page - VBsemi Electronics Co.,Ltd

부품명 SIR424DP-T1-GE3
상세내용  N-Channel 30 V (D-S) MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SIR424DP-T1-GE3 데이터시트(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
35
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 7.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.5
2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
90
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 32 A
0.0018
VGS = 4.5 V, ID = 29 A
0.002
5
Forward Transconductancea
gfs
VDS = 15 V, ID = 32 A
160
S
Dynamicb
Input Capacitance
Ciss
VDS= 12.5 V, VGS = 0 V, f = 1 MHz
2765
pF
Output Capacitance
Coss
1725
Reverse Transfer Capacitance
Crss
970
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 32 A
171
257
nC
VDS = 15 V, VGS = 4.5 V, ID = 29 A
81.5
123
Gate-Source Charge
Qgs
34
Gate-Drain Charge
Qgd
29
Gate Resistance
Rg
f = 1 MHz
1.4
2.1
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 0.555 
ID  27 A, VGEN = 10 V, Rg = 1 
18
27
ns
Rise Time
tr
11
17
Turn-Off Delay Time
td(off)
70
105
Fall Time
tf
10
15
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 0.625 
ID  24 A, VGEN = 4.5 V, Rg = 1 
55
83
Rise Time
tr
180
270
Turn-Off Delay Time
td(off)
55
83
Fall Time
tf
12
18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
100
A
Pulse Diode Forward Currenta
ISM
200
Body Diode Voltage
VSD
IS = 22 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
52
78
ns
Body Diode Reverse Recovery Charge
Qrr
70.2
105
nC
Reverse Recovery Fall Time
ta
27
ns
Reverse Recovery Rise Time
tb
25
SIR424DP-T1-GE3
2
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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