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SIR424DP-T1-GE3 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

부품명 SIR424DP-T1-GE3
상세내용  N-Channel 30 V (D-S) MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SIR424DP-T1-GE3 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  SIR424DP-T1-GE3 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd SIR424DP-T1-GE3 데이터시트 HTML 7Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
0
15
30
45
60
75
100
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS = 10 thru 4 V
VGS = 3 V
VGS = 2 V
0
100
200
300
400
500
600
0
1020
3040
5060
70
8090
ID - Drain Current (A)
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0
1000
1500
2000
3000
4000
0
6
12
18
24
30
Crss
VDS - Drain-to-Source Voltage (V)
Coss
Ciss
Transfer Characteristics
RDS(on) vs. Drain Current
Gate Charge
0.0
0.6
1.2
1.8
2.4
3.0
01234
GS - Gate-to-Source Voltage (V)
TC = 25 °C
- 55 °C
TC = 125 °C
V
0.0010
0.0015
0.0020
0.0025
0.0030
0
153045607590
VGS = 4.5 V
ID - Drain Current (A)
VGS = 10 V
0
2
4
6
8
10
0
30
60
90
120
150
180
ID = 32 A
Qg - Total Gate Charge (nC)
VDS = 15 V
VDS = 24 V
SIR424DP-T1-GE3
3
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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