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SM1A23NSV 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd

부품명 SM1A23NSV
상세내용  N-Channel 100-V (D-S) MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SM1A23NSV 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd

  SM1A23NSV 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd SM1A23NSV 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd SM1A23NSV 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd SM1A23NSV 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd SM1A23NSV 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd SM1A23NSV 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd  
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FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
175 °C Maximum Junction Temperature
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
100
0.100 at VGS = 10 V
5.0
0.120 at VGS = 4.5 V
4.5
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
a
TA = 25 °C
ID
5.0
4.5
A
TA = 70 °C
3.5
3.0
Pulsed Drain Current
IDM
25
Avalanche Current
IAS
15
Single Pulse Avalanche Energy
EAS
11
mJ
Maximum Power Dissipationa
TA = 25 °C
PD
3.3
1.7
W
TA = 70 °C
2.3
1.2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
t
≤ 10 s
RthJA
36
45
°C/W
Steady State
75
90
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
17
20
N-Channel MOSFET
G
D
S
SOT-223
G
D
S
D
N-Channel 100-V (D-S) MOSFET
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
SM1A23NSV
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