전자부품 데이터시트 검색엔진
  Korean  ▼

Delete All
ON OFF
ALLDATASHEET.CO.KR

X  

Preview PDF Download HTML

SM1105NSV 데이터시트(HTML) 2 Page - VBsemi Electronics Co.,Ltd

부품명 SM1105NSV
상세내용  N-Channel 100-V (D-S) MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SM1105NSV 데이터시트(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  SM1105NSV 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd SM1105NSV 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd SM1105NSV 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd SM1105NSV 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd SM1105NSV 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd SM1105NSV 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 55 °C
20
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
40
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 6.0 A
Ω
VGS = 10 V, ID = 4.0 A, TJ = 125 °C
0.110
VGS = 10 V, ID = 4.0 A, TJ = 175 °C
0.140
VGS = 4.5 V, ID = 3.1 A
0.120
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.0 A
25
S
Diode Forward Voltagea
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 50 V, VGS = 10 V, ID = 4.0 A
18
27
nC
Gate-Source Charge
Qgs
3.4
Gate-Drain Charge
Qgd
5.3
Gate Resistance
Rg
VGS = 0.1 V, f = 5 MHz
0.5
1.4
2.4
Ω
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
10
20
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
25
50
Fall Time
tf
12
24
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
50
80
Output Characteristics
0
8
16
24
32
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 10 V thru 5 V
4 V
2 V
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0
8
16
24
32
40
0
1234
5
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)
TC = 150 °C
1.5
3
0.122
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
SM1105NSV
2


Html Pages

1  2  3  4  5  6 


데이터시트 Download

Go To PDF Page


링크 URL



Privacy Policy
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn