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SM1660DSCS 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd

부품명 SM1660DSCS
상세내용  Dual N-Channel 60 V (D-S) MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SM1660DSCS 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  SM1660DSCS 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage Variance Over Temperature
1.2
1.5
1
100
1000
0.0
0.3
0.6
0.9
TJ = 125 °C
VSD - Source-to-Drain Voltage (V)
10
TJ = - 55 °C
VGS = 0 V
TJ = 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
1
2
3
4
5
02468
10
VGS - Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
0.01
0
1
2.5
3
100
600
0.1
Time (s)
1.5
2
0.5
1
10
TA = 25 °C
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
10-3
10-2
1
10
600
10-1
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 350 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
SM1660DSCS
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