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SM1660DSCS 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd

부품명 SM1660DSCS
상세내용  Dual N-Channel 60 V (D-S) MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SM1660DSCS 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd

  SM1660DSCS 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd SM1660DSCS 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd  
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FEATURES
Halogen-free According to IEC 61249-2-21
Definition
•Low On-Resistance:2.5
Ω
Low Threshold: 2 V (typ.)
Low Input Capacitance: 25 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
b
TA = 25 °C
ID
300
mA
TA = 100 °C
190
Pulsed Drain Currenta
IDM
800
Power Dissipationb
TA = 25 °C
PD
0.35
W
TA = 100 °C
0.14
Maximum Junction-to-Ambientb
RthJA
350
°C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
SOT-363
SC-70
6
4
1
2
3
5
Top View
S1
G1
D2
D1
G2
S2
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (mA)
60
2.5 at VGS = 10 V
300
D
1
S
1
G
1
D
2
S
2
G
2
Dual N-Channel 60 V (D-S) MOSFET
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
SM1660DSCS
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