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SPP4435B 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 SPP4435B
부품 상세설명  P-Channel MOSFET uses advanced trench technology
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
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SPP4435B 데이터시트(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Typical Characteristics: (T
C=25unless otherwise noted)
Fig.1 Continuous Drain Current vs. TC
Fig.2 Normalized RDSON vs. TJ
Fig.3 Normalized Vth vs. TJ
Fig.4 Gate Charge Waveform
SPP4435B


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