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SPP4435B 데이터시트(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 SPP4435B
부품 상세설명  P-Channel MOSFET uses advanced trench technology
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPP4435B 데이터시트(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description:
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features:
1) VDS=-30V,ID=-8A,RDS(ON)<20mΩ@VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings:(T
C=25unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-TC=25℃
-8
A
Continuous Drain Current-TC=100℃
-5.1
Pulsed Drain Current
1
-32
EAS
Single Pulse Avalanche Energy
---
mJ
PD
Power Dissipation(TC=25℃)
2.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics:
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
---
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
60
G
D
D
D
D
S1
S
S
SPP4435B


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