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TSP8N65M ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - VBsemi Electronics Co.,Ltd

๋ถ€ํ’ˆ๋ช… TSP8N65M
์ƒ์„ธ๋‚ด์šฉ  N-Channel 650V (D-S) Power MOSFET
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TYPICAL CHARACTERISTICS (25 ฐC, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
0
5
10
15
20
25
30
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
T
J = 25 ฐC
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
T
J = 150 ฐC
5 V
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
BOTTOM
6 V
VGS, Gate-to-Source Voltage (V)
0
10
20
30
40
50
0
5
10
15
20
25
T
J = 25 ฐC
T
J = 150 ฐC
V
DS = 30.8 V
TJ, Junction Temperature (ฐC)
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
0
0.5
1
1.5
2
2.5
3
V
GS = 10 V
I
D = 8 A
VDS, Drain-to-Source Voltage (V)
1000
500
0
200
400
2 000
0
1500
100
300
500
600
C
iss
C
oss
C
rss
V
GS = 0 V, f = 1 MHz
C
iss = Cgs + Cgd, Cds Shorted
C
rss = Cgd
C
oss = Cds + Cgd
Qg, Total Gate Charge (nC)
16
4
0
24
20
12
8
0
20
40
60
80
V
DS = 520 V
V
DS = 325 V
V
DS = 130 V
100
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