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TSP13N50M 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

부품명 TSP13N50M
상세내용  N-Channel 650 V (D-S) MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

TSP13N50M 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  TSP13N50M 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd TSP13N50M 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd TSP13N50M 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd TSP13N50M 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd TSP13N50M 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd TSP13N50M 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd TSP13N50M 데이터시트 HTML 7Page - VBsemi Electronics Co.,Ltd TSP13N50M 데이터시트 HTML 8Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Coss and Eoss vs. VDS
VDS, Drain-to-Source Voltage (V)
0
20
30
60
T
J = 25 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
5 V
0
5
10
15
20
25
30
50
10
40
VDS, Drain-to-Source Voltage (V)
10
010
20
0
40
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
5 V
20
30
T
J = 150 °C
515
25
30
VGS, Gate-to-Source Voltage (V)
40
010
25
60
20
515
20
0
T
J = 25 °C
T
J = 150 °C
V
DS = 29.6 V
30
50
10
TJ, Junction Temperature (°C)
2.5
0.5
- 60
3
2
1.5
1
0
- 40 - 20 0
20 40 60 80 100 120 140 160
V
GS = 10 V
I
D = 11 A
VDS, Drain-to-Source Voltage (V)
2400
1200
0
200
400
4800
0
3600
100
300
500
600
C
iss
C
oss
C
rss
V
GS = 0 V, f = 1 MHz
C
iss = Cgs + Cgd, Cds Shorted
C
rss = Cgd
C
oss = Cds + Cgd
0
2
4
6
8
10
12
14
50
500
5000
0
100
200
300
400
500
600
V
DS
C
oss
E
oss
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
TSP13N50M
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