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U4N60 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

부품명 U4N60
상세내용  N-Channel 650V (D-S) Power MOSFET
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제조사  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

U4N60 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  U4N60 데이터시트 HTML 1Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 2Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 3Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 4Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 5Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 6Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 7Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 8Page - VBsemi Electronics Co.,Ltd U4N60 데이터시트 HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
1
5
10
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
DS
4.5V
0.1
1
5
10
1
10
100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
DS
4.5V
0.1
1
5
10
4.0
5.0
6.0
7.0
8.0
9.0
V
= 100V
20µs PULSE WIDTH
DS
V
, Gate-to-Source Voltage (V)
GS
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
2.0
3.5
5.0
5.5
8.0
T , Junction Temperature ( C)
J
°
V
=
I =
GS
D
10V
3.2A
U4N60
3
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


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