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BD87581YG-C 데이터시트(PDF) 17 Page - Rohm

부품명 BD87581YG-C
부품 상세설명  Automotive Excellent EMI Characteristics Input/Output Rail-to-Rail CMOS Operational Amplifier
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제조업체  ROHM [Rohm]
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BD87581YG-C 데이터시트(HTML) 17 Page - Rohm

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© 2019 ROHM Co., Ltd. All rights reserved.
16.Jun.2020 Rev.002
www.rohm.com
BD87581YG-C
BD87582YFVM-C
TSZ22111 • 15 • 001
TSZ02201-0GDG2G500030-1-2
Operational Notes – continued
10.
Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 29. Example of Monolithic IC Structure
11.
Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
N
N
P
+
P
N
N
P
+
P Substrate
GND
N
P
+
N
N
P
+
N P
P Substrate
GND
GND
Parasitic
Elements
Pin A
Pin A
Pin B
Pin B
B
C
E
Parasitic
Elements
GND
Parasitic
Elements
C
B
E
Transistor (NPN)
Resistor
N Region
close-by
Parasitic
Elements


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