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2SC5519 데이터시트(PDF) 1 Page - Panasonic Semiconductor

부품명 2SC5519
상세설명  Silicon NPN triple diffusion mesa type(For horizontal deflection output)
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2SC5519 데이터시트(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SC5519
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q
High breakdown voltage, and high reliability through the use of a
glass passivation layer
q
High-speed switching
q
Wide area of safe operation (ASO)
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
1700
1700
5
16
8
3
50
3
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
Symbol
ICBO
VEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VF
Conditions
VCB = 1000V, IE = 0
VCB = 1700V, IE = 0
IE = 500mA, IC = 0
VCE = 5V, IC = 6A
IC = 6A, IB = 1.2A
IC = 6A, IB = 1.2A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 6A, IB1 = 1.2A, IB2 = –2.4A
IF = 6A
min
5
5
typ
3
max
50
1
10
3
1.5
5.0
0.5
–2
Unit
µA
mA
V
V
V
MHz
µs
µs
V
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±0.5
3.0
±0.3
φ3.2±0.1
5.45
±0.3
123
5.45
±0.3
1.1
±0.1
2.0
±0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±0.1


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