전자부품 데이터시트 검색엔진 |
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2SC5647 데이터시트(PDF) 1 Page - Sanyo Semicon Device |
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2SC5647 데이터시트(HTML) 1 Page - Sanyo Semicon Device |
1 / 7 page 2SC5647 No.7326-1/7 Features • Low noise : NF=2.6dB typ (f=2GHz). • High cutoff frequency : fT=9.0GHz typ (VCE=1V). : fT=11.5GHz typ (VCE=3V). • Low operating voltage. • High gain : S21e2=10.5dB typ (f=2GHz). Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9V Collector-to-Emitter Voltage VCEO 4V Emitter-to-Base Voltage VEBO 2V Collector Current IC 20 mA Collector Dissipation PC 80 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Marking : NH 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP 2 3 0.2 1.6 0.3 0.5 1 0.5 0.75 0.6 0 to 0.1 0.1 UHF to S Band Low-Noise Amplifier and OSC Applications SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN7326 2SC5647 Package Dimensions unit : mm 2106A [2SC5647] D2502 TS IM TA-3664 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. |
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