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GT50NR21 데이터시트(PDF) 3 Page - Toshiba Semiconductor

부품명 GT50NR21
상세설명  Discrete IGBTs Silicon N-Channel IGBT
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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GT50NR21 데이터시트(HTML) 3 Page - Toshiba Semiconductor

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GT50NR21
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Taaaa = 25
= 25
= 25
= 25
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Diode forward voltage
Symbol
IGES
ICES
VGE(OFF)
VCE(sat)
VF
Test Condition
VGE = ±25 V, VCE = 0 V
VCE = 1050 V, VGE = 0 V
IC = 50 mA, VCE = 5 V
IC = 50 A, VGE = 15 V
IF = 15 A, VGE = 0 V
Min
4.5
Typ.
1.8
Max
±100
1
7.5
2.4
2.5
Unit
nA
mA
V
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Taaaa = 25
= 25
= 25
= 25
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
Characteristics
Input capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Reverse recovery time
Symbol
Cies
tr
ton
tf
toff
trr
Test Condition
VCE = 10 V, VGE = 0 V,
f = 1 MHz
Resistive load
VCC = 600 V, IC = 50 A,
VGG = ±15 V, RG = 51 Ω
See Fig. 6.2.1, 6.2.2.
IF = 15 A, VGE = 0 V, di/dt = -20
A/µs
Min
Typ.
1500
0.14
0.20
0.20
0.45
0.50
Max
0.40
Unit
pF
µs
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Fig.
Fig.
Fig.
Fig. 6.2.2
6.2.2
6.2.2
6.2.2 Timing Chart of Switching Time
Timing Chart of Switching Time
Timing Chart of Switching Time
Timing Chart of Switching Time
7.
7.
7.
7. Marking (Note)
Marking (Note)
Marking (Note)
Marking (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-01-07
Rev.3.0


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