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GT60PR21 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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GT60PR21 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page GT60PR21 1 Discrete IGBTs Silicon N-Channel IGBT GT60PR21 GT60PR21 GT60PR21 GT60PR21 Start of commercial production 2012-03 1. 1. 1. 1. Applications Applications Applications Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. 2. 2. 2. Features Features Features Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ.) (IC = 60 A) FWD trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6) High junction temperature: Tj = 175 (max) 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter 2014-01-07 Rev.2.0 |
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