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ADC108S022CIMTX 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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ADC108S022CIMTX 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
3 / 17 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Analog Supply Voltage V A −0.3V to 6.5V Digital Supply Voltage V D −0.3V to V A + 0.3V, max 6.5V Voltage on Any Pin to GND −0.3V to V A +0.3V Input Current at Any Pin (Note 3) ±10 mA Package Input Current(Note 3) ±20 mA Power Dissipation at T A = 25˚C See (Note 4) ESD Susceptibility (Note 5) Human Body Model Machine Model 2500V 250V Soldering Temperature, Infrared, 10 seconds (Note 6) 260˚C Junction Temperature +150˚C Storage Temperature −65˚C to +150˚C Operating Ratings (Notes 1, 2) Operating Temperature −40˚C ≤ T A ≤ +105˚C V A Supply Voltage +2.7V to +5.25V V D Supply Voltage +2.7V to V A Digital Input Voltage 0V to V A Analog Input Voltage 0V to V A Clock Frequency 0.8 MHz to 3.2 MHz Package Thermal Resistance Package θ JA 16-lead TSSOP on 4-layer, 2 oz. PCB 96˚C / W Soldering process must comply with National Semiconduc- tor’s Reflow Temperature Profile specifications. Refer to www.national.com/packaging. (Note 6) ADC108S022 Converter Electrical Characteristics (Note 8) The following specifications apply for V A =VD = +2.7V to +5.25V, AGND = DGND = 0V, fSCLK = 0.8 MHz to 3.2 MHz, fSAMPLE = 50 kSPS to 200 kSPS, and C L = 50pF, unless otherwise noted. Boldface limits apply for TA =TMIN to TMAX: all other limits T A = 25˚C. Symbol Parameter Conditions Typical Limits (Note 7) Units STATIC CONVERTER CHARACTERISTICS Resolution with No Missing Codes 10 Bits INL Integral Non-Linearity (End Point Method) ±0.1 ±0.3 LSB (max) DNL Differential Non-Linearity ±0.1 ±0.3 LSB (max) V OFF Offset Error +0.3 ±0.7 LSB (max) OEM Offset Error Match ±0.05 ±0.2 LSB (max) FSE Full Scale Error +0.1 ±0.4 LSB (max) FSEM Full Scale Error Match ±0.05 ±0.2 LSB (max) DYNAMIC CONVERTER CHARACTERISTICS FPBW Full Power Bandwidth (−3dB) 8 MHz SINAD Signal-to-Noise Plus Distortion Ratio f IN = 40.2 kHz, −0.02 dBFS 61.8 61.3 dB (min) SNR Signal-to-Noise Ratio f IN = 40.2 kHz, −0.02 dBFS 61.9 61.4 dB (min) THD Total Harmonic Distortion f IN = 40.2 kHz, −0.02 dBFS −86.5 −73.4 dB (max) SFDR Spurious-Free Dynamic Range f IN = 40.2 kHz, −0.02 dBFS 83.2 76.6 dB (min) ENOB Effective Number of Bits f IN = 40.2 kHz 9.98 9.89 Bits (min) ISO Channel-to-Channel Isolation f IN = 20 kHz 79.8 dB IMD Intermodulation Distortion, Second Order Terms f a = 19.5 kHz, fb = 20.5 kHz −86.0 dB Intermodulation Distortion, Third Order Terms f a = 19.5 kHz, fb = 20.5 kHz −82.5 dB ANALOG INPUT CHARACTERISTICS V IN Input Range 0 to V A V I DCL DC Leakage Current ±1 µA (max) C INA Input Capacitance Track Mode 33 pF Hold Mode 3 pF www.national.com 3 |
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