KM68V257E-12 datasheet(6/8 Pages) SAMSUNG

부품명	KM68V257E-12

상세설명	32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)

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제조업체	SAMSUNG [Samsung semiconductor]

홈페이지	http://www.samsung.com/Products/Semiconductor

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6 / 8 page

KM68V257E/EL, KM68V257EI/ELI

CMOS SRAM

Revision 0.0

- 6 -

August 1998

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL

levels.

4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to

device.

5. Transition is measured

±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS=VIL.

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

Address

CS

tWP(2)

tDW

tDH

Valid Data

WE

Data in

Data out

tWC

tWR(5)

tAW

tCW(3)

High-Z(8)

High-Z

OE

tOHZ(6)

tAS(4)

TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)

Address

CS

tWP1(2)

tDW

tDH

tOW

tWHZ(6)

Valid Data

WE

Data in

Data out

tWC

tAS(4)

tWR(5)

tAW

tCW(3)

(10)

(9)

High-Z(8)

High-Z

유사한 부품 번호 - KM68V257E-12

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KM68V257C	197Kb / 9P	32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.
	KM68V257C-15	197Kb / 9P	32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.
	KM68V257C-17	197Kb / 9P	32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.

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유사한 설명 - KM68V257E-12

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	K6E0808C1C-C	168Kb / 8P	32Kx8 Bit High Speed CMOS Static RAM
	KM68V257C	197Kb / 9P	32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.
	K6R1008V1C-TI15	140Kb / 9P	128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
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	K6R4016V1D	227Kb / 12P	256Kx16 Bit High Speed Static RAM(3.3V Operating)
	K6R3024V1D	172Kb / 9P	128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
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	K6X0808T1D	153Kb / 9P	32Kx8 bit Low Power CMOS Static RAM
	K6T0808C1D	170Kb / 9P	32Kx8 bit Low Power CMOS Static RAM
	KM62256D	170Kb / 9P	32Kx8 bit Low Power CMOS Static RAM

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KM68V257E-12 데이터시트(PDF) 6 Page - Samsung semiconductor

KM68V257E-12 데이터시트(HTML) 6 Page - Samsung semiconductor

유사한 부품 번호 - KM68V257E-12

유사한 설명 - KM68V257E-12

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