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2SD2000 데이터시트(PDF) 2 Page - Panasonic Semiconductor |
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2SD2000 데이터시트(HTML) 2 Page - Panasonic Semiconductor |
2 / 3 page 2 Power Transistors 2SD2000 PC —Ta IC —VCE VCE(sat) —IC VBE(sat) —IC hFE —IC fT —IC Cob —VCB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 140 20 100 60 0 40 30 10 25 35 20 5 15 (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (P C=2W) (1) (3) (4) (2) Ambient temperature Ta (˚C) 08 26 47 15 3 0 4 3 1 2 T C=25˚C I B=40mA 35mA 30mA 25mA 20mA 15mA 10mA 5mA Collector to emitter voltage V CE (V) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 I C/IB=10 T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 I C/IB=10 T C=–25˚C 25˚C 100˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 1 10 102 103 104 V CE=4V T C=100˚C 25˚C –25˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 1 10 100 1000 V CE=12V f=10MHz T C=25˚C Collector current I C (A) 1 10 100 1000 3 30 300 1 10 100 1000 10000 I E=0 f=1MHz T C=25˚C Collector to base voltage V CB (V) 08 26 47 15 3 0.01 0.1 1 10 100 Pulsed t w=1ms Duty cycle=1% I C/IB=10 (IB1=–IB2) V CC=50V T C=25˚C t stg t f t on Collector current I C (A) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 Non repetitive pulse T C=25˚C t=1ms DC I CP I C Collector to emitter voltage V CE (V) |
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