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SSY39V800904EB33 데이터시트(PDF) 13 Page - Silicon Storage Technology, Inc |
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SSY39V800904EB33 데이터시트(HTML) 13 Page - Silicon Storage Technology, Inc |
13 / 20 page Data Sheet 2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A 13 ©2001 Silicon Storage Technology, Inc. S71117-04-000 6/01 360 AC CHARACTERISTICS TABLE 14: READ CYCLE TIMING PARAMETERS VDD = 3.0-3.6V Symbol Parameter SST39LF200A/400A-45 SST39LF200A/400A/800A-55 Units Min Max Min Max TRC Read Cycle Time 45 55 ns TCE Chip Enable Access Time 45 55 ns TAA Address Access Time 45 55 ns TOE Output Enable Access Time 30 30 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 15 15 ns TOHZ1 OE# High to High-Z Output 15 15 ns TOH1 Output Hold from Address Change 0 0 ns T14.7 360 TABLE 15: READ CYCLE TIMING PARAMETERS VDD= 2.7-3.6V Symbol Parameter SST39VF200A/400A/800A-70 SST39VF200A/400A/800A-90 Units Min Max Min Max TRC Read Cycle Time 70 90 ns TCE Chip Enable Access Time 70 90 ns TAA Address Access Time 70 90 ns TOE Output Enable Access Time 35 45 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 ns TOLZ1 OE# Low to Active Output 0 0 ns TCHZ1 CE# High to High-Z Output 20 30 ns TOHZ1 OE# High to High-Z Output 20 30 ns TOH1 Output Hold from Address Change 0 0 ns T15.6 360 |
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