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IKP04N60T 데이터시트(PDF) 1 Page - Infineon Technologies AG

부품명 IKP04N60T
상세설명  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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IKP04N60T
TrenchStop Series
q
Power Semiconductors
1
Rev. 2.2 Dec-04
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
µs
Designed for :
- Frequency Converters
- Drives
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
Ordering Code
IKP04N60T
600 V
4 A
1.5 V
175
°C
K04T60
TO-220
Q67040S4714
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current, limited by Tjmax
TC = 25
°C
TC = 100
°C
IC
8
4
Pulsed collector current, tp limited by Tjmax
ICpuls
12
Turn off safe operating area (VCE
≤ 600V, Tj ≤ 175°C)
-
12
Diode forward current, limited by Tjmax
TC = 25
°C
TC = 100
°C
IF
4
8
Diode pulsed current, tp limited by Tjmax
IFpuls
12
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
1)
VGE = 15V, VCC
≤ 400V, Tj ≤ 150°C
tSC
5
µs
Power dissipation TC = 25
°C
Ptot
42
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-1
(TO-220AB)


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