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STCC02-ED5 데이터시트(HTML) 6 Page - STMicroelectronics

부품명 STCC02-ED5
상세내용  CONTROL CIRCUIT FOR HOME APPLIANCE MCU BASED APPLICATION
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제조사  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STCC02-ED5 데이터시트(HTML) 6 Page - STMicroelectronics

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STCC02-ED5
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Buzzer driver
The MCU can drive a warning buzzer with a 50% PWM signal. The buzzer driver amplifies this signal in
current and translates it from the 5V MCU output to the VCC supply to produce the right sound level from
the buzzer.
The output stage is made of a transistor and a 1.5 k
Ω resistor. The transistor is referred to the power
ground COM and is connected by its collector to the output BUZ3. It has a DC current rating of 17 mA and
runs up to 5 kHz. Finally, the resistor is connected between the BUZ3 and VCC pins to discharge the
capacitance of the buzzer at turn off and in off state.
Table 2: Absolute Ratings (limiting values)
Note 1: Refer to the Application Recommendations for the calcultation of the functional dissipation.
Table 3: Electromagnetic Compatibility Ratings
(TJ = 25°C, according to typical application diagram of page 1, unless otherwise specified)
Table 4: Thermal Resistance
Symbol
Pin
Parameter name & conditions
Value
Unit
VDD
VDD
Output supply voltage
- 0.3 to 6
V
VIN
VIN
Input supply voltage
- 0.3 to 30
V
VDS, VCC DS, VCC
Door switch and power supply voltage
- 0.3 to 30
V
VSYN
SYN
AC input voltage, RZV = 10kΩ
- 1 to 30
V
VMO
BUZ1, MAG2, FAN1 Output voltage
- 0.3 to 30
V
VI
IN1, IN2, IN3
Input logic voltage
- 0.3 to VDD
+ 0.3V
V
VO
ZVS, CDD, /RST
Output logic voltage
- 0.3 to VDD
+ 0.3V
V
IM
DS, VCC
Maximum sourced current pulse, tp = 10ms
120
mA
MAG2, FAN1
Maximum sunk driver current pulse, tp = 1ms
120
mA
Maximum DC sourced current
100
mA
BUZ3
Maximum driver diode reverse current
15
mA
Maximum DC sourced current
10
mA
MAG2, FAN1
Maximum demagnetization diode reverse
current
1
mA
FMAX
IN3, BUZ3
Maximum buzzer frequency
5
kHz
PDIS
All
Operating dissipation, DIL-16 package (1)
0.65
W
TAMB
AII
Operating ambient temperature, DIL-16
- 10 to 85
°C
TJ
All
Operating junction temperature
- 10 to 150
°C
Storage junction temperature
- 25 to 150
°C
Symbol
Node
Parameter name & conditions
Value
Unit
VESD
All pins
ESD protection, MIL-STD 883 method 3015, HBM model
± 2
kV
Symbol
Parameter
Value
Unit
Rth(j-a)
DIL-16 thermal resistance junction to ambient
Copper thickness = 35µm
100
°C/W


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