전자부품 데이터시트 검색엔진 |
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AN7900T 데이터시트(PDF) 6 Page - Panasonic Semiconductor |
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AN7900T 데이터시트(HTML) 6 Page - Panasonic Semiconductor |
6 / 8 page 6 VO –15.6 V –15 VO V REGIN 300 mV 11 mV REGL mV 12 mV mA 2.5 3 Ibias mA mA 90 Vno dB 1 0.5 150 –15.75 300 150 5 54 –14.4 –14.25 RR V 1.1 A 2.1 4 69 –0.9 typ Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Peak output current Output voltage temperature coefficient Parameter Symbol Condition min max Unit VI =–17.5 to –30V, IO =5mA to 1A, P D * VI =–17.5 to –30V, T j =25˚C VI =–20 to –26V, T j =25˚C VI =–17.5 to –30V, T j =25˚C µV VI =–18.5 to –28.5V, I O =100mA, f=120Hz ∆I bias (IN) ∆I bias (L) VDIF (min.) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj =25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) Unless otherwise specified, VI =–23V, I O =500mA, C I =2µF, C O =1µF, T j =0 to 125˚C * AN7900T series : 15W, AN7900F series : 10.25W s Electrical Characteristics (Ta =25˚C) (continued) • AN7915T/AN7915F (–15V Type) < = IO =5mA to 1.5A, T j =25˚C IO =250 to 750mA, T j =25˚C Tj =25˚C IO =5mA to 1A, T j =25˚C f =10Hz to 100kHz, Ta=25˚C IO =1A, T j =25˚C Tj =25˚C IO =5mA, T j =0 to 125˚C Tj =25˚C VO –18.7 V –18 VO V REGIN 360 mV 15 mV REGL mV 12 mV mA 2.5 5 Ibias mA mA 110 Vno dB 1 0.5 180 –18.9 360 180 5 53 –17.3 –17.1 RR V 1.1 A 2.1 4 68 –1 typ Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Peak output current Output voltage temperature coefficient Parameter Symbol Condition min max Unit VI =–21 to –33V, IO =5mA to 1A, P D * VI =–21 to –33V, T j =25˚C IO =5mA to 1.5A, T j =25˚C IO =250 to 750mA, T j =25˚C VI =–24 to –30V, T j =25˚C Tj =25˚C VI =–21 to –33V, T j =25˚C µV IO =5mA to 1A, T j =25˚C f =10Hz to 100kHz, Ta=25˚C VI =–22 to –32V, I O =100mA, f=120Hz IO =1A, T j =25˚C Tj =25˚C IO =5mA, T j =0 to 125˚C Tj =25˚C ∆I bias (IN) ∆I bias (L) VDIF (min.) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj =25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) Unless otherwise specified, VI =–27V, I O =500mA, C I =2µF, C O =1µF, T j =0 to 125˚C * AN7900T series : 15W, AN7900F series : 10.25W • AN7918T/AN7918F (–18V Type) < = |
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