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74V1T80CTR 데이터시트(PDF) 3 Page - STMicroelectronics |
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3 / 9 page 74V1T80 3/9 DC SPECIFICATIONS AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3ns) (*) Voltage range is 5.0V ± 0.5V CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) =CPD xVCC xfIN +ICC Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. VIH High Level Input Voltage 4.5 to 5.5 22 2 V VIL Low Level Input Voltage 4.5 to 5.5 0.8 0.8 0.8 V VOH High Level Output Voltage 4.5 IO=-50 µA 4.4 4.5 4.4 4.4 V 4.5 IO=-8 mA 3.94 3.8 3.7 VOL Low Level Output Voltage 4.5 IO=50 µA 0.0 0.1 0.1 0.1 V 4.5 IO=8 mA 0.36 0.44 0.55 II Input Leakage Current 0to 5.5 VI =5.5Vor GND ± 0.1 ± 1.0 ± 1.0 µA ICC Quiescent Supply Current 5.5 VI =VCC or GND 110 20 µA +ICC Additional Worst Case Supply Current 5.5 One Input at 3.4V, other input at VCC or GND 1.35 1.5 1.5 mA Symbol Parameter Test Condition Value Unit VCC (V) CL (pF) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. tPLH tPHL Propagation Delay Time CK to Q 5.0 (*) 15 4.9 8.4 1.0 9.8 1.0 10.8 ns 5.0 (*) 50 5.9 12.0 1.0 14.0 1.0 15.0 tW CK Pulse Width, HIGH or LOW 5.0 (*) 50 4.0 4.0 4.0 ns ts SetupTimeDto CK, HIGH or LOW 5.0 (*) 50 4.0 4.0 4.0 ns th Hold Time D to CK, HIGH or LOW 5.0 (*) 50 1.0 1.0 1.0 ns fMAX Maximum Clock Frequency 5.0 (*) 50 165 180 150 150 MHz Symbol Parameter Test Condition Value Unit TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 410 10 10 pF CPD Power Dissipation Capacitance (note 1) 8pF |
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