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FQD3N60CTF 데이터시트(PDF) 3 Page - Fairchild Semiconductor |
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FQD3N60CTF 데이터시트(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page 3 www.fairchildsemi.com 600V N-Channel MOSFET REV. A Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 0 10 1 10 -1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Notes : ※ 1. 250µ s Pulse Test 2. T C = 25℃ V DS, Drain-Source Voltage [V] 246 8 10 10 0 10 1 150 oC 25 oC -55 oC Notes : ※ 1. V DS = 40V 2. 250µ s Pulse Test V GS, Gate-Source Voltage [V] 01 23 45 67 0 2 4 6 8 10 12 V GS = 20V V GS = 10V Note : T ※ J = 25℃ I D, Drain Current [A] 0.20.4 0.60.8 1.01.2 1.41.6 10 -1 10 0 10 1 150℃ Notes : ※ 1. V GS = 0V 2. 250µ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd Note ; ※ 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 02 4 6 8 10 12 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V Note : I ※ D = 10A Q G, Total Gate Charge [nC] |
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