SIGC16T120CS

Edited by INFINEON Technologies AI PS DD HV3, L 7131-S, Edition 2, 03.09.2003

IGBT Chip in NPT-technology

This chip is used for:

•

SGP07N120

FEATURES:

•

1200V NPT technology

•

180µm chip

•

short circuit prove

•

positive temperature coefficient

•

easy paralleling

Applications:

•

drives, SMPS, resonant

applications

G

C

E

Chip Type

Die Size

Package

Ordering Code

SIGC16T120CS

1200V

8A

4.04 x 4 mm

2

sawn on foil

Q67050-A4113

MECHANICAL PARAMETER:

Raster size

4.04 x 4

Area total / active

16.16 / 10.4

Emitter pad size

1.88x2.18

Gate pad size

0.71x1.08

mm

2

Thickness

200

µm

Wafer size

150

mm

Flat position

0

deg

Max.possible chips per wafer

898 pcs

Passivation frontside

Photoimide

Emitter metalization

3200 nm Al Si 1%

Collector metalization

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond

electrically conductive glue or solder

Wire bond

Al,

≤500µm

Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C