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IRFP054 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 IRFP054
상세설명  Power MOSFET
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 91200
2
S11-0447-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP054, SiHFP054
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-40
°C/W
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-0.65
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
60
-
-
V
VDS Temperature Coefficient
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.056
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 54 Ab
--
0.014
Ω
Forward Transconductance
gfs
VDS = 25 V, ID = 54 Ab
25
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
4500
-
pF
Output Capacitance
Coss
-
2000
-
Reverse Transfer Capacitance
Crss
-
300
-
Total Gate Charge
Qg
VGS = 10 V
ID = 64 A, VDS = 48 V,
see fig. 6 and 13b
-
-
160
nC
Gate-Source Charge
Qgs
--
48
Gate-Drain Charge
Qgd
--
54
Turn-On Delay Time
td(on)
VDD = 30 V, ID = 64 A ,
Rg = 6.2
Ω, RD = 0.45 Ω, see fig. 10b
-20
-
ns
Rise Time
tr
-
160
-
Turn-Off Delay Time
td(off)
-83
-
Fall Time
tf
-
150
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-5.0
-
nH
Internal Source Inductance
LS
-13
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
70
A
Pulsed Diode Forward Currenta
ISM
-
-
360
Body Diode Voltage
VSD
TJ = 25 °C, IS = 90 A, VGS = 0 Vb
--
2.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 6.4 A, dI/dt = 100 A/μsb
-
270
540
ns
Body Diode Reverse Recovery Charge
Qrr
-1.1
2.2
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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