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IRFPS60N50C 데이터시트(PDF) 2 Page - International Rectifier |
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IRFPS60N50C 데이터시트(HTML) 2 Page - International Rectifier |
2 / 3 page IRFPS60N50C 2 www.irf.com PROVISIONAL Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V trr Reverse Recovery Time ––– 920 1380 ns TJ = 125°C, IF = 36A Qrr Reverse RecoveryCharge ––– 20 30 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) S D G Diode Characteristics 60 240 A Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.68 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.038 0.043 Ω VGS = 10V, ID = 36A VGS(th) Gate Threshold Voltage 3.5 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ 36A, di/dt ≤ 42A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 0.93mH, RG = 25Ω, IAS = 36A, Pulse width ≤ 300µs; duty cycle ≤ 2%. Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 34 ––– ––– S VDS = 50V, ID = 36A Qg Total Gate Charge ––– 330 ––– ID = 36A Qgs Gate-to-Source Charge ––– 77 ––– nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– 160 ––– VGS = 10V, td(on) Turn-On Delay Time ––– 39 ––– VDD = 250V tr Rise Time ––– 49 ––– ID = 36A td(off) Turn-Off Delay Time ––– 94 ––– RG = 1.3Ω tf Fall Time ––– 11 ––– VGS = 10V, Ciss Input Capacitance ––– 10760 ––– VGS = 0V Coss Output Capacitance ––– 6120 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 240 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 25760 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 240 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 780 ––– VGS = 0V, VDS = 0V to 400V Dynamic @ TJ = 25°C (unless otherwise specified) ns |
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