전자부품 데이터시트 검색엔진 |
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MP4T6825 데이터시트(PDF) 2 Page - M-pulse Microwave Inc. |
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MP4T6825 데이터시트(HTML) 2 Page - M-pulse Microwave Inc. |
2 / 10 page Low Current 8 Volt, Low Noise High fT Silicon Transistor Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 2 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 MP4T6825 Series Electrical Specifications at 25 °C Symbol Parameters Test Condition s Units MP4T682500 Chip MP4T682533 SOT-23 MP4T682535 Micro-X MP4T682539 SOT-143 fT Gain Bandwidth Product VCE = 8V IC = 8 mA GHz 8 typ. 8 typ. 8 typ. 8 typ. |S21E| 2 Insertion Power Gain VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz dB 15 typ. 8 typ. 14 typ. 7 typ. 15 typ. 8 min. 14 typ. 7 typ. NF Noise Figure VCE = 8V IC = 2 mA f = 1 GHz f = 2 GHz dB 1.8 max. 2.1 typ. 1.9 max. 2.2 typ. 1.8 max. 2.1 typ. 1.9 max. 2.2 typ. GTU (max) Unilateral Gain VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz dB 17 typ. 11 typ. 16 typ. 10 typ. 17 typ. 11 typ. 16 typ. 10 typ. MAG Maximum Available Gain VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz dB 18 typ. 13 typ. 17 typ. 12 typ. 18 typ. 13 typ. 17 typ. 12 typ. P1dB Power Out at 1dB Compression VCE = 8V IC = 15 mA f = 1 GHz f = 2 GHz dBm 15 typ. 13.5 typ. 14 typ. 12.5 typ. 14 typ. 12.5 typ. 15 typ. 13.5 typ. RTH (J-A) Thermal Resistance Junction/ Ambient (Free Air) °C 650 typ. 500 typ. 625 typ. RTH (J-C) Thermal Resistance Junction/ Case °C/W 70 max. 1 200 typ. 200 typ. 200 typ. 1. Junction to infinite heat sink. Electrical Specifications at 25 °C Parameters Conditions Symbol Min. Typ. Max. Units Collector Cut-off Current VCB = 8 V IE = 0 ICBO 100 nA Emitter Cut-off Current VEB = 1 V IC = 0 IEBO 1 µA Forward Current Gain VCE = 8 V IC = 5 mA hFE 30 110 250 Collector-Base Junction Capacitance VCB = 8 V IE = 0 f = 1 MHz COB 0.25 0.40 pF |
유사한 부품 번호 - MP4T6825 |
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유사한 설명 - MP4T6825 |
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