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3 / 9 page STP10NC60H 2 Electrical characteristics 3/9 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/Off Table 4. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC= 1mA, VGE= 0 600 V ICES Collector cut-off Current (VGE = 0) VCE= Max Rating,TC= 25°C VCE=Max Rating,TC= 125°C 10 1 µA mA IGES Gate-Emitter Leakage Current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA 57 V VCE(sat) Collector-Emitter Saturation Voltage VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tc= 125°C 1.9 1.7 2.5 V V gfs Forward Transconductance VCE = 15V, IC= 5A TBD S Symbol Parameter Test Conditions Min. Typ. Max. Unit Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1MHz,VGE = 0 TBD TBD TBD pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 2) TBD TBD TBD nC nC nC |
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