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TC58NVG1S3BFT00 데이터시트(HTML) 1 Page - Toshiba Semiconductor

부품명 TC58NVG1S3BFT00
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC58NVG1S3BFT00 데이터시트(HTML) 1 Page - Toshiba Semiconductor

 
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TC58NVG1S3BFT00/TC58NVG1S8BFT00
2003-10-30A
1
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M
× 8 BIT/128M × 16 BIT) CMOS NAND E
2
PROM
DESCRIPTION
The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as (2048
+ 64) bytes/(1024 + 32) words × 64 pages × 2048 blocks.
The device has a 2112-byte/1056-word static register which allow program and read data to be transferred between
the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single
block unit (128 Kbytes
+ 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG1SxB is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
TC58NVG1S3B
TC58NVG1S8B
Memory cell array
2112
× 128K × 8
1056
× 128K × 16
Register
2112
× 8
1056
× 16
Page size
2112 bytes
1056 words
Block size
(128K
+ 4K) bytes
(64K
+ 2K) words
• Modes
Read, Reset, Auto Page Program, Auto Block Erase,Status Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Max 2048 blocks
Min 2008 blocks
• Power supply
VCC = 2.7 V to 3.6 V
• Program/Erase Cycles
100000 Cycles (With ECC)
• Access time
Cell array to register 25
µs max
Serial Read Cycle
50 ns min
• Program/Erase time
Auto Page Program
200
µs/page typ.
Auto Block Erase
1.5 ms/block typ.
• Operating current
Read (50 ns cycle)
10 mA typ.
Program (avg.)
10 mA typ.
Erase (avg.)
10 mA typ.
Standby
50
µA max
• Package
TC58NVG1S3BFT00 TSOP I 48-P-1220-0.50
TC58NVG1S8BFT00 TSOP I 48-P-1220-0.50
(Weight: 0.53 g typ.)


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