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TC58NVG1S3BFT00 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 21 Page - Toshiba Semiconductor

๋ถ€ํ’ˆ๋ช… TC58NVG1S3BFT00
์ƒ์„ธ๋‚ด์šฉ  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TC58NVG1S3BFT00 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 21 Page - Toshiba Semiconductor

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TC58NVG1S3BFT00/TC58NVG1S8BFT00
2003-10-30A
21
Auto Page Program Operation
The device carries out an Automatic Page Program operation when it receives a "10h" Program command
after the address and data have been input. The sequence of command, address and data input is shown below.
(Refer to the detailed timing chart.)
Random Column Address Change in Auto Page Program Operation
The column address can be changed by the 85h command during the data input sequence of the Auto Page
Program operation.
Two address input cycles after the 85h command are recognized as a new column address for the data input.
After the new data is input to the new column address, the 10h command initiates the actual data program into the
selected page automatically. The Random Column Address Change operation can be repeated multiple times within
the same page.
Data input
Selected
page
Reading & verification
Program
Col. M
Col. Mโ€™
80h
Page N
Col. M
85h
Din
Din
10h
Status
Din
Din
Din
Din
Col. Mโ€™
Busy
CLE
80h
ALE
I/O
Page P
CE
WE
Col. M
Din
10h
70h
Din Din
Din
Data
RE
BY
RY/
The data is transferred (programmed) from the register to the
selected page on the rising edge of WE following input of the โ€œ10hโ€
command. After programming, the programmed data is transferred
back to the register to be automatically verified by the device. If the
programming does not succeed, the Program/Verify operation is
repeated by the device until success is achieved or until the
maximum loop number set in the device is reached.
Program
Data input
Read& verification


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