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TC58NVG1S3BFT00 데이터시트(HTML) 30 Page - Toshiba Semiconductor

부품명 TC58NVG1S3BFT00
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC58NVG1S3BFT00 데이터시트(HTML) 30 Page - Toshiba Semiconductor

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TC58NVG1S3BFT00/TC58NVG1S8BFT00
2003-10-30A
30
(7)
Status Read during a Read operation
The device status can be read out by inputting the Status Read command “70h” in Read mode. Once the
device has been set to Status Read mode by a “70h” command, the device will not return to Read mode
unless the Read command “00h” is input during [A]. In this case, data output starts automatically from
address N and address input is unnecessary
(8)
Auto programming failure
(9)
BY
/
RY
: termination for the Ready/Busy pin (
BY
/
RY
)
A pull-up resistor needs to be used for termination because the
BY
/
RY
buffer consists of an open drain
circuit.
Fail
80
10
80
10
Address
M
Data
input
70
I/O
Address
N
Data
input
If the programming result for page address M is Fail, do not try to program the
page to address N in another block without the data input sequence.
Because the previous input data has been lost, the same input sequence of 80h
command, address and data is necessary.
10
80
M
N
This data may vary from device to device.
We recommend that you use this data as a
reference when selecting a resistor value.
VCC
VCC
Device
VSS
R
BY
/
RY
CL
1.5
µs
1.0
µs
0.5
µs
0
1 K
4 K
3 K
2 K
15 ns
10 ns
5 ns
tf
tr
R
tr
tf
VCC = 3.3 V
Ta
= 25°C
CL = 100 pF
tf
Ready
VCC
1.0 V
tr
3.0 V
1.0 V
Busy
00
Address N
Command
CE
WE
BY
/
RY
RE
[A]
Status Read
command input
Status Read
Status output
.
70
00
30


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