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N01L1618N1AT2 데이터시트(PDF) 4 Page - NanoAmp Solutions, Inc. |
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N01L1618N1AT2 데이터시트(HTML) 4 Page - NanoAmp Solutions, Inc. |
4 / 10 page (DOC# 14-02-009 REV F ECN# 01-0995) 4 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. NanoAmp Solutions, Inc. N01L1618N1A Power Savings with Page Mode Operation (WE = VIH) Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Page Address (A4 - A15 ) LB, UB OE CE Word Address (A0 - A3) Open page Word 1 Word 2 Word 16 ... |
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