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TC55NEM216ASTV55 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Toshiba Semiconductor

๋ถ€ํ’ˆ๋ช… TC55NEM216ASTV55
์ƒ์„ธ๋‚ด์šฉ  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TC55NEM216ASTV55 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Toshiba Semiconductor

 
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TC55NEM216ASTV55,70
2002-10-30
1/12
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to
5.5 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of
3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1
ยตA standby
current (typ) when chip enable ( CE ) is asserted high or chip select (CS) is asserted low. There are three control
inputs. CE is used to select the device and for data retention control, and output enable ( OE ) provides fast
memory access. Data byte control pin (
LB , UB ) provides lower and upper byte access. This device is well suited to
various microprocessor system applications where high speed, low power and battery backup are required. And,
with a guaranteed operating extreme temperature range of
โˆ’40ยฐ to 85ยฐC, the TC55NEM216ASTV can be used in
environments exhibiting extreme temperature conditions. The TC55NEM216ASTV is available in a plastic 44-pin
thin-small-outline package (TSOP).
FEATURES
โ€ข Low-power dissipation
Operating: 15 mW/MHz (typical)
โ€ข Single power supply voltage of 2.7 to 5.5 V
โ€ข Power down features using CE
โ€ข Data retention supply voltage of 2.0 to 5.5 V
โ€ข Direct TTL compatibility for all inputs and outputs
โ€ข Wide operating temperature range of โˆ’40ยฐ to 85ยฐC
โ€ข Standby Current (maximum): 20 ยตA
PIN ASSIGNMENT (TOP VIEW)
44 PIN TSOP
PIN NAMES
A0~A17
Address Inputs
CE
Chip Enable
CS
Chip Select
R/W
Read/Write Control
OE
Output Enable
LB , UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
VDD
Power
GND
Ground
NC
No Connection
โ€ข Access Times (maximum):
TC55NEM216ASTV
55
70
Access Time
55 ns
70 ns
CE Access Time
55 ns
70 ns
OE Access Time
30 ns
35 ns
โ€ข Package:
TSOP II44-P-400-0.80
(Weight:
g typ)
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
I/O4
VDD
GND
I/O5
I/O6
I/O7
I/O8
R/W
A15
A14
A13
A12
A16
A5
A6
A7
I/O16
I/O15
I/O14
I/O13
GND
VDD
I/O12
I/O11
I/O10
I/O9
CS
A8
A9
A10
A11
A17
1
44
2
43
3
42
4
41
5
40
6
39
7
38
8
37
9
36
10
35
11
34
12
33
13
32
14
31
15
30
16
29
17
28
18
27
19
26
20
25
21
24
22
23
OE
UB
LB
CE


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