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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BTB1132M3 데이터시트(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1132M3 데이터시트(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 4 page  CYStech Electronics Corp. Spec. No. : C313M3 Issued Date : 2003.05.13 Revised Date : Page No. : 1/4 BTB1132M3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1132M3 Features • Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA • Complementary to BTD1664M3 Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current(DC) IC -1 A Collector Current(Pulse) ICP -2.5 *1 A 0.6 Power Dissipation Pd 2 *2 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1 Single pulse, Pw=10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board. SOT-89 BTB1132M3 B：Base C：Collector E：Emitter B C E |
유사한 부품 번호 - BTB1132M3 |
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유사한 설명 - BTB1132M3 |
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