전자부품 데이터시트 검색엔진 |
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CM1401-03 데이터시트(PDF) 3 Page - California Micro Devices Corp |
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CM1401-03 데이터시트(HTML) 3 Page - California Micro Devices Corp |
3 / 9 page © 2005 California Micro Devices Corp. All rights reserved. 10/04/05 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com 3 CM1401-03 Specifications Note 1: TA=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A2, then clamping voltage is measured at Pin C2. Note 4: These parameters are guaranteed by design and characterization. ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 °C DC Power per Resistor 100 mW DC Package Power Rating 600 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 °C ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE1) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance 80 100 120 Ω C Capacitance At 2.5V DC 24 30 36 pF TCR Temperature Coefficient of Resistance 1200 ppm/°C TCC Temperature Coefficient of Capacitance At 2.5V DC -300 ppm/°C VDIODE Diode Voltage (reverse bias) IDIODE=10μA6.0 V ILEAK Diode Leakage Current (reverse bias) VDIODE=3.3V 100 nA VSIG Signal Voltage Positive Clamp Negative Clamp ILOAD = 10mA 5.6 -1.5 6.8 -0.8 9.0 -0.4 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2 and 4 ±30 ±15 kV kV VCL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2,3 and 4 +10 -5 V V fC Cut-off Frequency ZSOURCE=50Ω, ZLOAD=50Ω R=100 Ω, C=30pF 58 MHz |
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